NCE01P18K

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产商:	NCE(新洁能)
型号:	NCE01P18K
编号:	C002155308
封装:	TO-252-2(DPAK)
海关编码:	EAR99
参数描述:	P沟道,-100V,-18A,100mΩ@-10V
数据手册:	数据手册

规格

Category

MOSFET

Pd-Power Dissipation

70W

Rds On

16A 0.1Ω 10V

Transistor polarity

P沟道

Continuous drain current

18A

VGS

3V 0.00025A

Package

TO-252-2(DPAK)

VDS

100V

类型

1个P沟道

漏源电压(Vdss)

100V

连续漏极电流(Id)

18A

导通电阻(RDS(on)@Vgs,Id)

100mΩ@10V,16A

功率(Pd)

70W

阈值电压(Vgs(th)@Id)

3V@250uA

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

5+

1.80059

50+

1.60108

150+

1.51557

500+

1.40888

数量(递增量:5):

库存:

70,000

+-

加入购物车

询价

最小包装量:

2500 (圆盘)

交付周期:

2-3 工作日

共:

￥9.01

C002155308 NCE01P18K is designed and produced by NCE(新洁能), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002155308 NCE01P18K reference price ￥1.8006，real-time inventory 70000. TO-252-2(DPAK) Pd-Power Dissipation: 70W, Rds On: 16A 0.1Ω 10V, Transistor polarity: P沟道, Continuous drain current: 18A, VGS: 3V 0.00025A, Package: TO-252-2(DPAK), VDS: 100V, 类型: 1个P沟道, 漏源电压(Vdss): 100V, 连续漏极电流(Id): 18A, 导通电阻(RDS(on)@Vgs,Id): 100mΩ@10V,16A, 功率(Pd): 70W, 阈值电压(Vgs(th)@Id): 3V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of NCE01P18K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.