SE80130G

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Mfr.:	SINO-IC(光宇睿芯)
Mfr. Part #:	SE80130G
YJC. No:	C002155488
Package:	TO-263
ECCN:	EAR99
Description:	N沟道 80V 130A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Continuous drain current

130A

Transistor polarity

N沟道

Rds On

60A 0.0043Ω 10V

VDS

80V

VGS

4.5V 0.00025A

Package

TO-263

Pd-Power Dissipation

160W

类型

1个N沟道

漏源电压(Vdss)

80V

连续漏极电流(Id)

130A

导通电阻(RDS(on)@Vgs,Id)

4.3mΩ@10V,60A

功率(Pd)

160W

阈值电压(Vgs(th)@Id)

4.5V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

5.21199

10+

4.63323

50+

4.33839

100+

4.04355

500+

3.86883

1000+

3.78147

QTY(Multiplicity:1):

Stock:

100

+-

Add To Cart

Quota

Mpq:

50 (圆盘)

Delivery:

2-3 Business Day

Total:

￥5.22

C002155488 SE80130G is designed and produced by SINO-IC(光宇睿芯), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002155488 SE80130G reference price ￥5.212，real-time inventory 100. TO-263 Continuous drain current: 130A, Transistor polarity: N沟道, Rds On: 60A 0.0043Ω 10V, VDS: 80V, VGS: 4.5V 0.00025A, Package: TO-263, Pd-Power Dissipation: 160W, 类型: 1个N沟道, 漏源电压(Vdss): 80V, 连续漏极电流(Id): 130A, 导通电阻(RDS(on)@Vgs,Id): 4.3mΩ@10V,60A, 功率(Pd): 160W, 阈值电压(Vgs(th)@Id): 4.5V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SE80130G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.