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AGM3015H

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Mfr.:AGMSEMI(芯控源)
Mfr. Part #:
YJC. No:
Package:TO-263
ECCN:EAR99
Description:TO-263
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
30V
连续漏极电流(Id)
230A
功率(Pd)
58W
导通电阻(RDS(on)@Vgs,Id)
1.5mΩ@10V,12A
阈值电压(Vgs(th)@Id)
1.7V@250uA
栅极电荷(Qg@Vgs)
115nC@10V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
1.53851
10+
1.50738
30+
1.48664
QTY(Multiplicity:1):
Stock:
40
Mpq:
800 (圆盘)
Delivery:
2-3 Business Day
Total:
1.54

C002158516 AGM3015H is designed and produced by AGMSEMI(芯控源), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002158516 AGM3015H reference price ¥1.5385,real-time inventory 40. TO-263 类型: 1个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 230A, 功率(Pd): 58W, 导通电阻(RDS(on)@Vgs,Id): 1.5mΩ@10V,12A, 阈值电压(Vgs(th)@Id): 1.7V@250uA, 栅极电荷(Qg@Vgs): 115nC@10V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AGM3015H, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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