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MDT40N06D

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Minos(迈诺斯)
型号:
编号:
封装:TO-252
海关编码:EAR99
参数描述:TO-252
数据手册:
规格
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
40A
导通电阻(RDS(on)@Vgs,Id)
13mΩ@10V,25A
功率(Pd)
87W
阈值电压(Vgs(th)@Id)
3V@250uA
栅极电荷(Qg@Vgs)
31nC@10V
输入电容(Ciss@Vds)
910pF@25V
反向传输电容(Crss@Vds)
30pF@25V
工作温度
-55℃~+175℃
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
5+
1.06687
50+
0.86048
150+
0.77203
500+
0.66163
2500+
0.57328
5000+
0.5438
数量(递增量:5):
库存:
12,500
最小包装量:
2500 (圆盘)
交付周期:
2-3 工作日
共:
5.34

C002160880 MDT40N06D is designed and produced by Minos(迈诺斯), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002160880 MDT40N06D reference price ¥1.0669,real-time inventory 12500. TO-252 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 40A, 导通电阻(RDS(on)@Vgs,Id): 13mΩ@10V,25A, 功率(Pd): 87W, 阈值电压(Vgs(th)@Id): 3V@250uA, 栅极电荷(Qg@Vgs): 31nC@10V, 输入电容(Ciss@Vds): 910pF@25V, 反向传输电容(Crss@Vds): 30pF@25V, 工作温度: -55℃~+175℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of MDT40N06D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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