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AGM425MD

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:AGMSEMI(芯控源)
型号:
编号:
封装:TO-252-4
海关编码:EAR99
参数描述:
数据手册:
规格
Category
MOSFET
类型
1个N沟道+1个P沟道
漏源电压(Vdss)
40V
连续漏极电流(Id)
20A;23A
导通电阻(RDS(on)@Vgs,Id)
32mΩ@10V,15A;18mΩ@10V,15A
功率(Pd)
25W
阈值电压(Vgs(th)@Id)
3V@250uA
栅极电荷(Qg@Vgs)
17nC@10V;5.5nC@4.5V
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
10+
0.63336
100+
0.62244
500+
0.61152
1000+
0.6006
2500+
0.58968
数量(递增量:1):
库存:
222,500
最小包装量:
2500 (圆盘)
交付周期:
1-3 工作日
共:
6.34

C002164624 AGM425MD is designed and produced by AGMSEMI(芯控源), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002164624 AGM425MD reference price ¥0.6334,real-time inventory 222500. TO-252-4 类型: 1个N沟道+1个P沟道, 漏源电压(Vdss): 40V, 连续漏极电流(Id): 20A;23A, 导通电阻(RDS(on)@Vgs,Id): 32mΩ@10V,15A;18mΩ@10V,15A, 功率(Pd): 25W, 阈值电压(Vgs(th)@Id): 3V@250uA, 栅极电荷(Qg@Vgs): 17nC@10V;5.5nC@4.5V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AGM425MD, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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