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GC2M0280120D

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Mfr.:GwokSemi(国晶微)
Mfr. Part #:
YJC. No:
Package:TO247-3
ECCN:EAR99
Description:TO247-3
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
封装类型
单管
沟道类型
1个N沟道
Vds-漏源击穿电压
1200V
Id-漏极电流(25℃)
11A
Pd-功耗
69.4W
Vgs(th)-漏源阈值电压
3.1V
RDS(on)-导通电阻(20V)
320mΩ
Qg-栅极电荷
19nC
Ciss-输入电容
267pF
Crss-反向传输电容
4pF
工作温度
-55℃~+150℃
Coss-输出电容
31pF
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
31.28904
10+
27.29505
30+
24.86753
90+
22.82385
QTY(Multiplicity:1):
Stock:
120
Mpq:
30 (管)
Delivery:
2-3 Business Day
Total:
31.29
C002182419 GC2M0280120D is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002182419 GC2M0280120D reference price ¥31.289,real-time inventory 120. TO247-3 封装类型: 单管, 沟道类型: 1个N沟道, Vds-漏源击穿电压: 1200V, Id-漏极电流(25℃): 11A, Pd-功耗: 69.4W, Vgs(th)-漏源阈值电压: 3.1V, RDS(on)-导通电阻(20V): 320mΩ, Qg-栅极电荷: 19nC, Ciss-输入电容: 267pF, Crss-反向传输电容: 4pF, 工作温度: -55℃~+150℃, Coss-输出电容: 31pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC2M0280120D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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