1N60L-TN3-R

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Mfr.:	UTC(友顺)
Mfr. Part #:	1N60L-TN3-R
YJC. No:	C002249901
Package:	TO-252-2(DPAK)
ECCN:	EAR99
Description:	N沟道,600V,1.2A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

VGS

4V 0.00025A

VDS

600V

Package

TO-252-2(DPAK)

Pd-Power Dissipation

28W

Continuous drain current

1.2A

Transistor polarity

N沟道

Rds On

0.6A 11.5Ω 10V

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

1.2A

导通电阻(RDS(on)@Vgs,Id)

11.5Ω@10V,600mA

功率(Pd)

28W

阈值电压(Vgs(th)@Id)

4V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

5+

1.03295

50+

0.90683

150+

0.85277

500+

0.78528

QTY(Multiplicity:5):

Stock:

7,500

+-

Add To Cart

Quota

Mpq:

2500 (圆盘)

Delivery:

2-3 Business Day

Total:

￥5.17

C002249901 1N60L-TN3-R is designed and produced by UTC(友顺), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002249901 1N60L-TN3-R reference price ￥1.033，real-time inventory 7500. TO-252-2(DPAK) VGS: 4V 0.00025A, VDS: 600V, Package: TO-252-2(DPAK), Pd-Power Dissipation: 28W, Continuous drain current: 1.2A, Transistor polarity: N沟道, Rds On: 0.6A 11.5Ω 10V, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 1.2A, 导通电阻(RDS(on)@Vgs,Id): 11.5Ω@10V,600mA, 功率(Pd): 28W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60L-TN3-R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.