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BC856 3B

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Mfr.:Dowosemi(东沃)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:PNP 3B (220-475) BC856
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
Collector-emitter voltage
65V
Pd-Power Dissipation
0.2W
Transistor polarity
PNP
Collector Current Ic
0.1A
Package
SOT-23
晶体管类型
PNP
集电极电流(Ic)
100mA
集射极击穿电压(Vceo)
65V
功率(Pd)
200mW
直流电流增益(hFE@Ic,Vce)
220@2mA,5V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@100mA,5mA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
50+
0.05627
500+
0.04544
3000+
0.03514
6000+
0.031531
24000+
0.0284
51000+
0.02672
QTY(Multiplicity:50):
Stock:
15,000
Mpq:
3000 (圆盘)
Delivery:
2-3 Business Day
Total:
2.82

C002259621 BC856 3B is designed and produced by Dowosemi(东沃), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002259621 BC856 3B reference price ¥0.0563,real-time inventory 15000. SOT-23 Collector-emitter voltage: 65V, Pd-Power Dissipation: 0.2W, Transistor polarity: PNP, Collector Current Ic: 0.1A, Package: SOT-23, 晶体管类型: PNP, 集电极电流(Ic): 100mA, 集射极击穿电压(Vceo): 65V, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 220@2mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@100mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of BC856 3B, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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