GC3M0160120D

C002268997 GC3M0160120D is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002268997 GC3M0160120D reference price ￥29.4632，real-time inventory 60. TO-247-3 沟道类型: 1个N沟道, Vds-漏源击穿电压: 1200V, Id-漏极电流(25℃): 17A, Pd-功耗: 97W, Vgs(th)-漏源阈值电压: 2.8V, RDS(on)-导通电阻(15V): 160mΩ, Qg-栅极电荷: 38nC, Ciss-输入电容: 632pF, Crss-反向传输电容: 3pF, 工作温度: -55℃~+150℃, Coss-输出电容: 39pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC3M0160120D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.