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2SB1132SQ-Q

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产商:Pjsemi(平晶)
型号:
编号:
封装:SOT-89
海关编码:EAR99
参数描述:PNP -32V -1A
数据手册:
规格
Category
Bipolar Transistor (triode)
Collector-emitter voltage
32V
Transistor polarity
PNP
Pd-Power Dissipation
0.5W
Collector Current Ic
1A
Package
SOT-89
晶体管类型
PNP
集电极电流(Ic)
1A
集射极击穿电压(Vceo)
32V
功率(Pd)
500mW
直流电流增益(hFE@Ic,Vce)
270@500mA,2V
特征频率(fT)
150MHz
集电极截止电流(Icbo)
500nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@500mA,50mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
10+
0.36041
100+
0.28833
300+
0.252301
1000+
0.22447
5000+
0.20285
10000+
0.19204
数量(递增量:10):
库存:
3,000
最小包装量:
1000 (圆盘)
交付周期:
2-3 工作日
共:
3.61

C002304499 2SB1132SQ-Q is designed and produced by Pjsemi(平晶), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002304499 2SB1132SQ-Q reference price ¥0.3604,real-time inventory 3000. SOT-89 Collector-emitter voltage: 32V, Transistor polarity: PNP, Pd-Power Dissipation: 0.5W, Collector Current Ic: 1A, Package: SOT-89, 晶体管类型: PNP, 集电极电流(Ic): 1A, 集射极击穿电压(Vceo): 32V, 功率(Pd): 500mW, 直流电流增益(hFE@Ic,Vce): 270@500mA,2V, 特征频率(fT): 150MHz, 集电极截止电流(Icbo): 500nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@500mA,50mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2SB1132SQ-Q, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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