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GC3M0075120K

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Mfr.:GwokSemi(国晶微)
Mfr. Part #:
YJC. No:
Package:TO247-4
ECCN:EAR99
Description:TO247-4
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
封装类型
单管
沟道类型
1个N沟道
Vds-漏源击穿电压
1200V
Id-漏极电流(25℃)
32A
Pd-功耗
136W
Vgs(th)-漏源阈值电压
2.5V
RDS(on)-导通电阻(15V)
75mΩ
Qg-栅极电荷
53nC
Ciss-输入电容
1390pF
Crss-反向传输电容
2pF
工作温度
-40℃~+175℃
Coss-输出电容
58pF
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
27.89779
10+
24.1839
30+
21.98461
90+
19.7542
600+
18.72717
900+
18.26034
QTY(Multiplicity:1):
Stock:
1,710
Mpq:
30 (管)
Delivery:
2-3 Business Day
Total:
27.90
C002304848 GC3M0075120K is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002304848 GC3M0075120K reference price ¥27.8978,real-time inventory 1710. TO247-4 封装类型: 单管, 沟道类型: 1个N沟道, Vds-漏源击穿电压: 1200V, Id-漏极电流(25℃): 32A, Pd-功耗: 136W, Vgs(th)-漏源阈值电压: 2.5V, RDS(on)-导通电阻(15V): 75mΩ, Qg-栅极电荷: 53nC, Ciss-输入电容: 1390pF, Crss-反向传输电容: 2pF, 工作温度: -40℃~+175℃, Coss-输出电容: 58pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC3M0075120K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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