Login
logo
Cart

GC2M1000170D

img
The pictures of products are only demonstrative and may be different than the real look of products. It does not change their basic features.
Mfr.:GwokSemi(国晶微)
Mfr. Part #:
YJC. No:
Package:TO247-3
ECCN:EAR99
Description:TO247-3
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
封装类型
单管
沟道类型
1个N沟道
Vds-漏源击穿电压
1700V
Id-漏极电流(25℃)
5A
Pd-功耗
69W
Vgs(th)-漏源阈值电压
2.8V
RDS(on)-导通电阻(20V)
0.8Ω
Qg-栅极电荷
22nC
Ciss-输入电容
215pF
Crss-反向传输电容
2.2pF
工作温度
-55℃~+150℃
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
17.48334
10+
15.00396
30+
13.45823
90+
11.87101
600+
11.1552
900+
10.84398
QTY(Multiplicity:1):
Stock:
4,020
Mpq:
30 (管)
Delivery:
2-3 Business Day
Total:
17.49
C002305203 GC2M1000170D is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002305203 GC2M1000170D reference price ¥17.4833,real-time inventory 4020. TO247-3 封装类型: 单管, 沟道类型: 1个N沟道, Vds-漏源击穿电压: 1700V, Id-漏极电流(25℃): 5A, Pd-功耗: 69W, Vgs(th)-漏源阈值电压: 2.8V, RDS(on)-导通电阻(20V): 0.8Ω, Qg-栅极电荷: 22nC, Ciss-输入电容: 215pF, Crss-反向传输电容: 2.2pF, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC2M1000170D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
Log in to see more benefits!