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SVF6N60D

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Mfr.:Silan(士兰)
Mfr. Part #:
YJC. No:
Package:TO-252-2(DPAK)
ECCN:EAR99
Description:N沟道,600V,6A,1.5Ω@10V SVF6N60DTR
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
VGS
4V 0.00025A
VDS
600V
Transistor polarity
N沟道
Pd-Power Dissipation
125W
Package
TO-252-2(DPAK)
Continuous drain current
6A
Rds On
1.5Ω 3A 10V
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
6A
导通电阻(RDS(on)@Vgs,Id)
1.5Ω@10V,3A
功率(Pd)
125W
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
2.11213
10+
1.65087
30+
1.35942
100+
1.25393
500+
1.20872
1000+
1.17858
QTY(Multiplicity:1):
Stock:
12,500
Mpq:
2500 (圆盘)
Delivery:
2-3 Business Day
Total:
2.12
C002339625 SVF6N60D is designed and produced by Silan(士兰), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002339625 SVF6N60D reference price ¥2.1121,real-time inventory 12500. TO-252-2(DPAK) VGS: 4V 0.00025A, VDS: 600V, Transistor polarity: N沟道, Pd-Power Dissipation: 125W, Package: TO-252-2(DPAK), Continuous drain current: 6A, Rds On: 1.5Ω 3A 10V, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 6A, 导通电阻(RDS(on)@Vgs,Id): 1.5Ω@10V,3A, 功率(Pd): 125W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SVF6N60D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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