HCH65R180

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产商:	Huake(华科)
型号:	HCH65R180
编号:	C002415967
封装:	TO-262
海关编码:	EAR99
参数描述:	TO-262
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

20A

功率(Pd)

185W

导通电阻(RDS(on)@Vgs,Id)

180mΩ@10V,10A

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

39nC@10V

输入电容(Ciss@Vds)

1.17nF@100V

反向传输电容(Crss@Vds)

4pF@100V

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

6.82605

10+

5.74497

50+

5.14437

100+

4.47825

500+

4.17249

1000+

4.04145

数量(递增量:1):

库存:

5,950

+-

加入购物车

询价

最小包装量:

50 (管)

交付周期:

2-3 工作日

共:

￥6.83

C002415967 HCH65R180 is designed and produced by Huake(华科), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002415967 HCH65R180 reference price ￥6.8261，real-time inventory 5950. TO-262 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 20A, 功率(Pd): 185W, 导通电阻(RDS(on)@Vgs,Id): 180mΩ@10V,10A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 39nC@10V, 输入电容(Ciss@Vds): 1.17nF@100V, 反向传输电容(Crss@Vds): 4pF@100V. You can download the Chinese information, pin diagram, datasheet data manual function manual of HCH65R180, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.