MMBT9013G

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Mfr.:	Pjsemi(平晶)
Mfr. Part #:	MMBT9013G
YJC. No:	C002428530
Package:	SOT-23
ECCN:	EAR99
Description:	NPN 30V 500mA
Datasheet:	Datasheet

SPECIFICATION

Category

Bipolar Transistor (triode)

Transistor polarity

NPN

Pd-Power Dissipation

0.2W

Collector-emitter voltage

30V

Package

SOT-23

Collector Current Ic

0.5A

晶体管类型

NPN

集电极电流(Ic)

500mA

集射极击穿电压(Vceo)

30V

功率(Pd)

200mW

直流电流增益(hFE@Ic,Vce)

250@50mA,1V

特征频率(fT)

100MHz

集电极截止电流(Icbo)

100nA

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

600mV@500mA,50mA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

50+

0.10886

500+

0.0897

3000+

0.07324

6000+

0.06686

24000+

0.06132

51000+

0.05834

QTY(Multiplicity:50):

Stock:

24,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥5.45

C002428530 MMBT9013G is designed and produced by Pjsemi(平晶), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002428530 MMBT9013G reference price ￥0.1089，real-time inventory 24000. SOT-23 Transistor polarity: NPN, Pd-Power Dissipation: 0.2W, Collector-emitter voltage: 30V, Package: SOT-23, Collector Current Ic: 0.5A, 晶体管类型: NPN, 集电极电流(Ic): 500mA, 集射极击穿电压(Vceo): 30V, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 250@50mA,1V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 600mV@500mA,50mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBT9013G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.