C002428589 NM8205E is designed and produced by JD(晶导微), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is ESOT-26, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

ContactUS

Cart

Home Products Discrete Semiconductor Transistor MOSFET

NM8205E

The pictures of products are only demonstrative and may be different than the real look of products. It does not change their basic features.

Mfr.:	JD(晶导微)
Mfr. Part #:
YJC. No:
Package:	ESOT-26
ECCN:	EAR99
Description:	ESOT-26
Datasheet:

SPECIFICATION

Category

MOSFET

漏源电压(Vdss)

20V

连续漏极电流(Id)

导通电阻(RDS(on)@Vgs,Id)

20mΩ

阈值电压(Vgs(th)@Id)

1.1V

输入电容(Ciss@Vds)

800pF

反向传输电容(Crss@Vds)

125pF

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

10+

0.28107

100+

0.22953

300+

0.20376

QTY(Multiplicity:10):

Stock:

6,000

Mpq:

3000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥2.82

C002428589 NM8205E is designed and produced by JD(晶导微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002428589 NM8205E reference price ￥0.2811，real-time inventory 6000. ESOT-26 漏源电压(Vdss): 20V, 连续漏极电流(Id): 5A, 导通电阻(RDS(on)@Vgs,Id): 20mΩ, 阈值电压(Vgs(th)@Id): 1.1V, 输入电容(Ciss@Vds): 800pF, 反向传输电容(Crss@Vds): 125pF, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NM8205E, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

RFQ