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GC3M0060065K

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Mfr.:GwokSemi(国晶微)
Mfr. Part #:
YJC. No:
Package:TO-247-4
ECCN:EAR99
Description:TO-247-4
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
封装类型
单管
沟道类型
1个N沟道
Vds-漏源击穿电压
650V
Id-漏极电流(25℃)
37A
Pd-功耗
150W
Vgs(th)-漏源阈值电压
2.3V
RDS(on)-导通电阻(15V)
60mΩ
Qg-栅极电荷
46nC
Ciss-输入电容
1020pF
Crss-反向传输电容
9pF
工作温度
-40℃~+175℃
Coss-输出电容
80pF
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
35.66687
10+
31.12305
30+
28.34282
90+
26.01905
QTY(Multiplicity:1):
Stock:
900
Mpq:
30 (管)
Delivery:
2-3 Business Day
Total:
35.67
C002442996 GC3M0060065K is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002442996 GC3M0060065K reference price ¥35.6669,real-time inventory 900. TO-247-4 封装类型: 单管, 沟道类型: 1个N沟道, Vds-漏源击穿电压: 650V, Id-漏极电流(25℃): 37A, Pd-功耗: 150W, Vgs(th)-漏源阈值电压: 2.3V, RDS(on)-导通电阻(15V): 60mΩ, Qg-栅极电荷: 46nC, Ciss-输入电容: 1020pF, Crss-反向传输电容: 9pF, 工作温度: -40℃~+175℃, Coss-输出电容: 80pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC3M0060065K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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