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CS100N03B4

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Crhj(华晶)
型号:
编号:
封装:TO-252-2(DPAK)
海关编码:EAR99
参数描述:
数据手册:
规格
Category
MOSFET
Continuous drain current
100A
VDS
30V
Transistor polarity
N沟道
Pd-Power Dissipation
100W
Rds On
0.0053Ω 10V 50A
Package
TO-252-2(DPAK)
VGS
3V 0.00025A
类型
1个N沟道
漏源电压(Vdss)
30V
连续漏极电流(Id)
100A
功率(Pd)
100W
导通电阻(RDS(on)@Vgs,Id)
5.3mΩ@10V,50A
阈值电压(Vgs(th)@Id)
3V@250uA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
1.89597
10+
1.37683
30+
1.09408
100+
0.94331
500+
0.87616
1000+
0.83586
数量(递增量:1):
库存:
7,500
最小包装量:
2500 (圆盘)
交付周期:
2-3 工作日
共:
1.90

C002450594 CS100N03B4 is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002450594 CS100N03B4 reference price ¥1.896,real-time inventory 7500. TO-252-2(DPAK) Continuous drain current: 100A, VDS: 30V, Transistor polarity: N沟道, Pd-Power Dissipation: 100W, Rds On: 0.0053Ω 10V 50A, Package: TO-252-2(DPAK), VGS: 3V 0.00025A, 类型: 1个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 100A, 功率(Pd): 100W, 导通电阻(RDS(on)@Vgs,Id): 5.3mΩ@10V,50A, 阈值电压(Vgs(th)@Id): 3V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of CS100N03B4, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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