NCE65T1K2K

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Mfr.:	NCE(新洁能)
Mfr. Part #:	NCE65T1K2K
YJC. No:	C002471878
Package:	TO-252-2(DPAK)
ECCN:	EAR99
Description:
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Package

TO-252-2(DPAK)

Continuous drain current

4A

VGS

4V 0.00025A

Rds On

10V 1.1Ω 2A

Pd-Power Dissipation

41W

VDS

650V

Transistor polarity

N沟道

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

4A

导通电阻(RDS(on)@Vgs,Id)

1.1Ω@10V,2A

功率(Pd)

41W

阈值电压(Vgs(th)@Id)

4V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

1.7639

QTY(Multiplicity:1):

Stock:

27,500

+-

Add To Cart

Quota

Mpq:

2500 (圆盘)

Delivery:

2-4 Business Day

Total:

￥1.77

C002471878 NCE65T1K2K is designed and produced by NCE(新洁能), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002471878 NCE65T1K2K reference price ￥1.7639，real-time inventory 27500. TO-252-2(DPAK) Package: TO-252-2(DPAK), Continuous drain current: 4A, VGS: 4V 0.00025A, Rds On: 10V 1.1Ω 2A, Pd-Power Dissipation: 41W, VDS: 650V, Transistor polarity: N沟道, 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 4A, 导通电阻(RDS(on)@Vgs,Id): 1.1Ω@10V,2A, 功率(Pd): 41W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of NCE65T1K2K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.