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GC3M0021120K

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Mfr.:GwokSemi(国晶微)
Mfr. Part #:
YJC. No:
Package:TO-247-4
ECCN:EAR99
Description:TO-247-4
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
封装类型
单管
沟道类型
1个N沟道
Vds-漏源击穿电压
1200V
Id-漏极电流(25℃)
100A
Pd-功耗
469W
Vgs(th)-漏源阈值电压
2.5V
RDS(on)-导通电阻(15V)
21mΩ
Qg-栅极电荷
162nC
Ciss-输入电容
4818pF
Crss-反向传输电容
12pF
工作温度
-40℃~+175℃
Coss-输出电容
180pF
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
146.89899
5+
143.16435
30+
136.93996
QTY(Multiplicity:1):
Stock:
120
Mpq:
30 (管)
Delivery:
2-3 Business Day
Total:
146.90
C002535962 GC3M0021120K is designed and produced by GwokSemi(国晶微), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002535962 GC3M0021120K reference price ¥146.899,real-time inventory 120. TO-247-4 封装类型: 单管, 沟道类型: 1个N沟道, Vds-漏源击穿电压: 1200V, Id-漏极电流(25℃): 100A, Pd-功耗: 469W, Vgs(th)-漏源阈值电压: 2.5V, RDS(on)-导通电阻(15V): 21mΩ, Qg-栅极电荷: 162nC, Ciss-输入电容: 4818pF, Crss-反向传输电容: 12pF, 工作温度: -40℃~+175℃, Coss-输出电容: 180pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of GC3M0021120K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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