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BCD80N06

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Bao Cheng(宝诚)
型号:
编号:
封装:TO-252
海关编码:EAR99
参数描述:TO-252
数据手册:
规格
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
80A
导通电阻(RDS(on)@Vgs,Id)
5.3mΩ@10V
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
1.09147
10+
0.88278
30+
0.79335
100+
0.68175
500+
0.63206
1000+
0.57244
数量(递增量:1):
库存:
2,500
最小包装量:
2500 (圆盘)
交付周期:
2-3 工作日
共:
1.10

C002537404 BCD80N06 is designed and produced by Bao Cheng(宝诚), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002537404 BCD80N06 reference price ¥1.0915,real-time inventory 2500. TO-252 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 80A, 导通电阻(RDS(on)@Vgs,Id): 5.3mΩ@10V. You can download the Chinese information, pin diagram, datasheet data manual function manual of BCD80N06, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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