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G1-MMBT5551

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Mfr.:Goodwork(固得沃克)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:SOT-23
Datasheet:
Datasheet
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
100@10mA,5V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
50+
0.06939
500+
0.06099
3000+
0.04971
6000+
0.04691
30000+
0.04448
45000+
0.04318
QTY(Multiplicity:50):
Stock:
9,000
Mpq:
3000 (圆盘)
Delivery:
2-3 Business Day
Total:
3.47
C002644741 G1-MMBT5551 is designed and produced by Goodwork(固得沃克), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002644741 G1-MMBT5551 reference price ¥0.0694,real-time inventory 9000. SOT-23 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 100@10mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of G1-MMBT5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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