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CS12N65FA9R

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Mfr.:Crhj(华晶)
Mfr. Part #:
YJC. No:
Package:TO-220F
ECCN:EAR99
Description:
Datasheet:
SPECIFICATION
Category
MOSFET
Pd-Power Dissipation
42W
Rds On
6A 10V 0.8Ω
Transistor polarity
N沟道
Continuous drain current
12A
VGS
4V 0.00025A
Package
TO-220F(TO-220IS)
VDS
650V
类型
1个N沟道
漏源电压(Vdss)
650V
连续漏极电流(Id)
12A
导通电阻(RDS(on)@Vgs,Id)
800mΩ@10V,6A
功率(Pd)
42W
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
1.75088
100+
1.72043
500+
1.68998
1000+
1.66866
3000+
1.6443
QTY(Multiplicity:1):
Stock:
200,000
Mpq:
50
Delivery:
1-3 Business Day
Total:
1.76

C002680506 CS12N65FA9R is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002680506 CS12N65FA9R reference price ¥1.7509,real-time inventory 200000. TO-220F Pd-Power Dissipation: 42W, Rds On: 6A 10V 0.8Ω, Transistor polarity: N沟道, Continuous drain current: 12A, VGS: 4V 0.00025A, Package: TO-220F(TO-220IS), VDS: 650V, 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 12A, 导通电阻(RDS(on)@Vgs,Id): 800mΩ@10V,6A, 功率(Pd): 42W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of CS12N65FA9R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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