C002785732 MMDT5551 is designed and produced by Anmei(安美), and is available for sale in the Discrete Semiconductor Transistor Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is SOT-363, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

ContactUS

Cart

Home Products Discrete Semiconductor Transistor Bipolar Transistor (triode)

MMDT5551

The pictures of products are only demonstrative and may be different than the real look of products. It does not change their basic features.

Mfr.:	Anmei(安美)
Mfr. Part #:
YJC. No:
Package:	SOT-363
ECCN:	EAR99
Description:	SOT-363
Datasheet:

SPECIFICATION

Category

Bipolar Transistor (triode)

晶体管类型

NPN

集电极电流(Ic)

200mA

集射极击穿电压(Vceo)

25V

功率(Pd)

200mW

直流电流增益(hFE@Ic,Vce)

100@10mA,5V

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

20+

0.1609

200+

0.12994

600+

0.11274

QTY(Multiplicity:20):

Stock:

6,000

Mpq:

3000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥3.22

C002785732 MMDT5551 is designed and produced by Anmei(安美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002785732 MMDT5551 reference price ￥0.1609，real-time inventory 6000. SOT-363 晶体管类型: NPN, 集电极电流(Ic): 200mA, 集射极击穿电压(Vceo): 25V, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 100@10mA,5V. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMDT5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

RFQ