DMD2N60-TR

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	DIYI(迪一)
型号:	DMD2N60-TR
编号:	C002815562
封装:	TO-252
海关编码:	EAR99
参数描述:	TO-252
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

2A

功率(Pd)

34W

导通电阻(RDS(on)@Vgs,Id)

4.4Ω@10V,1A

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

5.7nC@10V

输入电容(Ciss@Vds)

300pF@25V

反向传输电容(Crss@Vds)

2pF@25V

工作温度

-55℃~+150℃

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

5+

1.18463

50+

1.04879

150+

0.99047

500+

0.91785

数量(递增量:5):

库存:

5,000

+-

加入购物车

询价

最小包装量:

2500 (圆盘)

交付周期:

2-3 工作日

共:

￥5.93

C002815562 DMD2N60-TR is designed and produced by DIYI(迪一), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002815562 DMD2N60-TR reference price ￥1.1846，real-time inventory 5000. TO-252 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 2A, 功率(Pd): 34W, 导通电阻(RDS(on)@Vgs,Id): 4.4Ω@10V,1A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 5.7nC@10V, 输入电容(Ciss@Vds): 300pF@25V, 反向传输电容(Crss@Vds): 2pF@25V, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of DMD2N60-TR, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.