IHW20N135R5F

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Mfr.:	Fuxinsemi(富芯森美)
Mfr. Part #:	IHW20N135R5F
YJC. No:	C002819704
Package:	TO-247-3
ECCN:	EAR99
Description:	TO-247-3
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

集射极击穿电压(Vces)

1.35kV

集电极电流(Ic)

40A

功率(Pd)

333W

正向压降(Vf@If)

1.5V@20A

集射极饱和电压(VCE(sat)@Ic,Vge)

1.85V@20A,15V

栅极阈值电压(Vge(th)@Ic)

4.8V@1mA

栅极电荷(Qg@Ic,Vge)

175nC@20A,15V

输入电容(Cies@Vce)

1.781nF@25V

关断延迟时间(Td(off))

204ns

导通损耗(Eon)

1.02mJ

工作温度

-40℃~+175℃

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

11.23773

10+

8.85717

30+

7.55769

90+

6.08349

QTY(Multiplicity:1):

Stock:

240

+-

Add To Cart

Quota

Mpq:

30 (管)

Delivery:

2-3 Business Day

Total:

￥11.24

C002819704 IHW20N135R5F is designed and produced by Fuxinsemi(富芯森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002819704 IHW20N135R5F reference price ￥11.2377，real-time inventory 240. TO-247-3 集射极击穿电压(Vces): 1.35kV, 集电极电流(Ic): 40A, 功率(Pd): 333W, 正向压降(Vf@If): 1.5V@20A, 集射极饱和电压(VCE(sat)@Ic,Vge): 1.85V@20A,15V, 栅极阈值电压(Vge(th)@Ic): 4.8V@1mA, 栅极电荷(Qg@Ic,Vge): 175nC@20A,15V, 输入电容(Cies@Vce): 1.781nF@25V, 关断延迟时间(Td(off)): 204ns, 导通损耗(Eon): 1.02mJ, 工作温度: -40℃~+175℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of IHW20N135R5F, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.