C3M0350120D

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Mfr.:	Cree(科锐)
Mfr. Part #:	C3M0350120D
YJC. No:	C002883847
Package:	TO-247
ECCN:	EAR99
Description:	MOSFET Gen 3 1200V 350 mO SiC MOSFET
Datasheet:

SPECIFICATION

Category

MOSFET

Operating Temperature Range

150℃~-55℃

VDS

1200V

Rds On

0.455Ω

Termination type

Through Hole

Pd-Power Dissipation

50W

Circuit Branch Number

1Channel

Transistor polarity

MOSFET

Continuous drain current

7.6A

VGS

19V 8V

Package

TO-247-3

Qg

19 nC

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

10+

33.9948

100+

33.516

500+

32.9175

1000+

32.49855

3000+

32.019751

QTY(Multiplicity:1):

Stock:

4,500

+-

Add To Cart

Quota

Mpq:

30

Delivery:

1-3 Business Day

Total:

￥339.95

C002883847 C3M0350120D is designed and produced by Cree(科锐), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002883847 C3M0350120D reference price ￥33.9948，real-time inventory 4500. TO-247 Operating Temperature Range: 150℃~-55℃, VDS: 1200V, Rds On: 0.455Ω, Termination type: Through Hole, Pd-Power Dissipation: 50W, Circuit Branch Number: 1Channel, Transistor polarity: MOSFET, Continuous drain current: 7.6A, VGS: 19V 8V, Package: TO-247-3, Qg: 19 nC. You can download the Chinese information, pin diagram, datasheet data manual function manual of C3M0350120D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.