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IKW50N65H5

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Infineon(英飞凌)
型号:
编号:
封装:TO-247-3
海关编码:EAR99
参数描述:
数据手册:
数据手册
规格
Category
IGBT Tube
Package
TO-247-3
Collector-emitter voltage
650V
Collector Current Ic
80A
Types
-
Gate Threshold Voltage-VGE(th)
20V
Max, gate / emitter voltage
20V
Pd-Power Dissipation
305W
Operating Temperature Range
-40℃~175℃
Qualification level
-
Termination type
Through Hole
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
240+
22.47
数量(递增量:240):
库存:
71,040
最小包装量:
240 (管)
交付周期:
7-9 工作日
共:
5,392.80
C003139055 IKW50N65H5 is designed and produced by Infineon(英飞凌), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003139055 IKW50N65H5 reference price ¥22.47,real-time inventory 71040. TO-247-3 Package: TO-247-3, Collector-emitter voltage: 650V, Collector Current Ic: 80A, Types: -, Gate Threshold Voltage-VGE(th): 20V, Max, gate / emitter voltage: 20V, Pd-Power Dissipation: 305W, Operating Temperature Range: -40℃~175℃, Qualification level: -, Termination type: Through Hole. You can download the Chinese information, pin diagram, datasheet data manual function manual of IKW50N65H5, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
数据手册
RFQ
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