AOD5B65MQ1E

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Mfr.:	AOS(美国万代)
Mfr. Part #:	AOD5B65MQ1E
YJC. No:	C003151329
Package:	TO-252(DPAK)
ECCN:	EAR99
Description:	TO-252(DPAK)
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

集射极击穿电压(Vces)

650V

集电极电流(Ic)

10A

功率(Pd)

52W

栅极阈值电压(Vge(th)@Ic)

2.7V@15V,5A

栅极电荷(Qg@Ic,Vge)

8.8nC

开启延迟时间(Td(on))

7ns

关断延迟时间(Td(off))

78ns

导通损耗(Eon)

0.09mJ

关断损耗(Eoff)

0.06mJ

反向恢复时间(Trr)

74ns

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

2.7321

10+

2.43726

30+

2.28438

100+

2.14242

500+

1.79298

1000+

1.73838

QTY(Multiplicity:1):

Stock:

10,000

+-

Add To Cart

Quota

Mpq:

2500 (圆盘)

Delivery:

2-3 Business Day

Total:

￥2.74

C003151329 AOD5B65MQ1E is designed and produced by AOS(美国万代), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003151329 AOD5B65MQ1E reference price ￥2.7321，real-time inventory 10000. TO-252(DPAK) 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 10A, 功率(Pd): 52W, 栅极阈值电压(Vge(th)@Ic): 2.7V@15V,5A, 栅极电荷(Qg@Ic,Vge): 8.8nC, 开启延迟时间(Td(on)): 7ns, 关断延迟时间(Td(off)): 78ns, 导通损耗(Eon): 0.09mJ, 关断损耗(Eoff): 0.06mJ, 反向恢复时间(Trr): 74ns, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AOD5B65MQ1E, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.