DMF12N65

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	DIYI(迪一)
型号:	DMF12N65
编号:	C003308945
封装:	ITO-220AB-3
海关编码:	EAR99
参数描述:	ITO-220AB-3
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

12A

功率(Pd)

51W

导通电阻(RDS(on)@Vgs,Id)

850mΩ@10V,6A

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

42nC@10V

输入电容(Ciss@Vds)

1.48nF@25V

反向传输电容(Crss@Vds)

25pF@25V

工作温度

-55℃~+150℃

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

3.87975

10+

3.25731

50+

2.66763

数量(递增量:1):

库存:

4

+-

加入购物车

询价

最小包装量:

50 (管)

交付周期:

2-3 工作日

共:

￥3.88

C003308945 DMF12N65 is designed and produced by DIYI(迪一), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003308945 DMF12N65 reference price ￥3.8798，real-time inventory 4. ITO-220AB-3 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 12A, 功率(Pd): 51W, 导通电阻(RDS(on)@Vgs,Id): 850mΩ@10V,6A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 42nC@10V, 输入电容(Ciss@Vds): 1.48nF@25V, 反向传输电容(Crss@Vds): 25pF@25V, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of DMF12N65, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.