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NCE65T260K

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Mfr.:NCE(新洁能)
Mfr. Part #:
YJC. No:
Package:TO-252-2
ECCN:EAR99
Description:
Datasheet:
SPECIFICATION
Category
MOSFET
Package
TO-252
VDS
650V
Pd-Power Dissipation
131W
VGS
4V 0.00025A
Transistor polarity
N沟道
Continuous drain current
15A
Rds On
10V 0.26Ω 8A
类型
1个N沟道
漏源电压(Vdss)
650V
连续漏极电流(Id)
15A
导通电阻(RDS(on)@Vgs,Id)
260mΩ@10V,8A
功率(Pd)
131W
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
20+
3.00208
100+
2.94941
500+
2.89674
1000+
2.85987
2500+
2.81774
QTY(Multiplicity:1):
Stock:
32,500
Mpq:
2500 (圆盘)
Delivery:
1-3 Business Day
Total:
60.05

C003319327 NCE65T260K is designed and produced by NCE(新洁能), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003319327 NCE65T260K reference price ¥3.0021,real-time inventory 32500. TO-252-2 Package: TO-252, VDS: 650V, Pd-Power Dissipation: 131W, VGS: 4V 0.00025A, Transistor polarity: N沟道, Continuous drain current: 15A, Rds On: 10V 0.26Ω 8A, 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 15A, 导通电阻(RDS(on)@Vgs,Id): 260mΩ@10V,8A, 功率(Pd): 131W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of NCE65T260K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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