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2N7002K

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Highdiode(海德)
型号:
编号:
封装:SOT-23
海关编码:EAR99
参数描述:N沟道,60V,340mA,5Ω@10V
数据手册:
规格
Category
MOSFET
VGS
0.00025A 2.5V
Transistor polarity
N沟道
VDS
60V
Package
SOT-23
Continuous drain current
0.34A
Pd-Power Dissipation
0.35W
Rds On
0.5A 10V 5Ω
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
340mA
功率(Pd)
350mW
导通电阻(RDS(on)@Vgs,Id)
5Ω@10V,500mA
阈值电压(Vgs(th)@Id)
2.5V@250uA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
20+
0.11433
200+
0.10032
600+
0.09254
3000+
0.08177
9000+
0.07773
21000+
0.07555
数量(递增量:20):
库存:
3,000
最小包装量:
3000 (圆盘)
交付周期:
2-3 工作日
共:
2.29

C003341732 2N7002K is designed and produced by Highdiode(海德), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003341732 2N7002K reference price ¥0.1143,real-time inventory 3000. SOT-23 VGS: 0.00025A 2.5V, Transistor polarity: N沟道, VDS: 60V, Package: SOT-23, Continuous drain current: 0.34A, Pd-Power Dissipation: 0.35W, Rds On: 0.5A 10V 5Ω, 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 340mA, 功率(Pd): 350mW, 导通电阻(RDS(on)@Vgs,Id): 5Ω@10V,500mA, 阈值电压(Vgs(th)@Id): 2.5V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2N7002K, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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