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DTC114EDC

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Pjsemi(平晶)
型号:
编号:
封装:DFN-3L(1x0.6)
海关编码:EAR99
参数描述:DFN-3L(1x0.6)
数据手册:
规格
Category
Digital Transistor
晶体管类型
1个NPN-预偏置
集射极击穿电压(Vceo)
50V
集电极电流(Ic)
100mA
功率(Pd)
200mW
直流电流增益(hFE@Ic,Vce)
50@10mA,5V
最小输入电压(VI(on)@Ic/Io,Vce/Vo)
2.4V@5mA,0.2V
最大输入电压(VI(off)@Ic/Io,Vce/Vcc)
1V@0.1mA,5V
输出电压(VO(on)@Io/Ii)
300mV@10mA,0.5mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
20+
0.18975
200+
0.15044
600+
0.1286
2000+
0.11549
10000+
0.09889
20000+
0.09278
数量(递增量:20):
库存:
50,000
最小包装量:
10000 (圆盘)
交付周期:
2-3 工作日
共:
3.80

C003358253 DTC114EDC is designed and produced by Pjsemi(平晶), and is available for sale in the Discrete Semiconductor-Transistor-Digital Transistor of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003358253 DTC114EDC reference price ¥0.1898,real-time inventory 50000. DFN-3L(1x0.6) 晶体管类型: 1个NPN-预偏置, 集射极击穿电压(Vceo): 50V, 集电极电流(Ic): 100mA, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 50@10mA,5V, 最小输入电压(VI(on)@Ic/Io,Vce/Vo): 2.4V@5mA,0.2V, 最大输入电压(VI(off)@Ic/Io,Vce/Vcc): 1V@0.1mA,5V, 输出电压(VO(on)@Io/Ii): 300mV@10mA,0.5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of DTC114EDC, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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