AGM30P08AP

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Mfr.:	AGMSEMI(芯控源)
Mfr. Part #:	AGM30P08AP
YJC. No:	C003365727
Package:	DFN(3x3)
ECCN:	EAR99
Description:	DFN(3x3)
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个P沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

60A

功率(Pd)

50W

导通电阻(RDS(on)@Vgs,Id)

7.2mΩ@10V,15A

阈值电压(Vgs(th)@Id)

1.6V@250uA

栅极电荷(Qg@Vgs)

32nC@10V

输入电容(Ciss@Vds)

2.497nF@30V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

5+

1.26079

50+

1.02115

150+

0.91845

500+

0.79033

2500+

0.73327

5000+

0.69904

QTY(Multiplicity:5):

Stock:

5,000

+-

Add To Cart

Quota

Mpq:

5000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥6.31

C003365727 AGM30P08AP is designed and produced by AGMSEMI(芯控源), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003365727 AGM30P08AP reference price ￥1.2608，real-time inventory 5000. DFN(3x3) 类型: 1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 60A, 功率(Pd): 50W, 导通电阻(RDS(on)@Vgs,Id): 7.2mΩ@10V,15A, 阈值电压(Vgs(th)@Id): 1.6V@250uA, 栅极电荷(Qg@Vgs): 32nC@10V, 输入电容(Ciss@Vds): 2.497nF@30V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AGM30P08AP, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.