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C3M0120090J

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Mfr.:Cree(科锐)
Mfr. Part #:
YJC. No:
Package:TO-263-7
ECCN:EAR99
Description:N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7
Datasheet:
SPECIFICATION
Category
RFFETMOSFET
Continuous drain current
22A
VDS
900V
Transistor polarity
SiliconCarbideMOSFET
Rds On
0.17Ω
Operating Temperature Range
150℃~-55℃
Qg
17.3 nC
Circuit Branch Number
1Channel
Termination type
SMD/SMT
VGS
18V 8V
Pd-Power Dissipation
83W
Package
TO-263-7
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
10+
44.49144
100+
43.8648
500+
43.0815
1000+
42.53319
3000+
41.90655
QTY(Multiplicity:1):
Stock:
5,000
Mpq:
50
Delivery:
1-3 Business Day
Total:
444.92

C003422038 C3M0120090J is designed and produced by Cree(科锐), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003422038 C3M0120090J reference price ¥44.4914,real-time inventory 5000. TO-263-7 Continuous drain current: 22A, VDS: 900V, Transistor polarity: SiliconCarbideMOSFET, Rds On: 0.17Ω, Operating Temperature Range: 150℃~-55℃, Qg: 17.3 nC, Circuit Branch Number: 1Channel, Termination type: SMD/SMT, VGS: 18V 8V, Pd-Power Dissipation: 83W, Package: TO-263-7. You can download the Chinese information, pin diagram, datasheet data manual function manual of C3M0120090J, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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