C003488413 1N60G is designed and produced by Huaxuanyang(华轩阳), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is SOT-223, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

ContactUS

Cart

Home Products Discrete Semiconductor Transistor MOSFET

1N60G

The pictures of products are only demonstrative and may be different than the real look of products. It does not change their basic features.

Mfr.:	Huaxuanyang(华轩阳)
Mfr. Part #:
YJC. No:
Package:	SOT-223
ECCN:	EAR99
Description:	SOT-223
Datasheet:

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

导通电阻(RDS(on)@Vgs,Id)

9.5Ω

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

0.57054

50+

0.46571

150+

0.4133

500+

0.37398

2500+

0.3124

4000+

0.29667

QTY(Multiplicity:5):

Stock:

171

Mpq:

4000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥2.86

C003488413 1N60G is designed and produced by Huaxuanyang(华轩阳), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003488413 1N60G reference price ￥0.5705，real-time inventory 171. SOT-223 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 1A, 导通电阻(RDS(on)@Vgs,Id): 9.5Ω. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

RFQ