MMDT3906

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Mfr.:	LGE(鲁光)
Mfr. Part #:	MMDT3906
YJC. No:	C003495529
Package:	SOT-363
ECCN:	EAR99
Description:	SOT-363
Datasheet:	Datasheet

SPECIFICATION

Category

Bipolar Transistor (triode)

晶体管类型

PNP

集电极电流(Ic)

200mA

集射极击穿电压(Vceo)

40V

功率(Pd)

200mW

直流电流增益(hFE@Ic,Vce)

100@10mA,1V

特征频率(fT)

250MHz

集电极截止电流(Icbo)

50nA

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

400mV

工作温度

-55℃~+150℃

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

20+

0.18084

200+

0.15872

600+

0.14644

3000+

0.12924

9000+

0.12285

21000+

0.11941

QTY(Multiplicity:20):

Stock:

33,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-3 Business Day

Total:

￥3.62

C003495529 MMDT3906 is designed and produced by LGE(鲁光), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003495529 MMDT3906 reference price ￥0.1808，real-time inventory 33000. SOT-363 晶体管类型: PNP, 集电极电流(Ic): 200mA, 集射极击穿电压(Vceo): 40V, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 100@10mA,1V, 特征频率(fT): 250MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 400mV, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMDT3906, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.