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TPBT4448-1006

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Mfr.:Tech public(台舟)
Mfr. Part #:
YJC. No:
Package:DFN1006-2L
ECCN:EAR99
Description:TPBT4448-1006 DFN1006-2
Datasheet:
Datasheet
SPECIFICATION
Category
Switching Diode
Reverse recovery time
4nS
Reverse Leakage Current
0.0000005A
Package
DFN1006-2L
Vf-Forward Voltage
1.2V
If-forward Current
0.1A
Configuration
独立式
Vr-reverse voltage
80V
二极管配置
独立式
正向压降(Vf)
1.2V@100mA
直流反向耐压(Vr)
80V
整流电流
100mA
反向电流(Ir)
500nA@80V
反向恢复时间(trr)
4ns
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
20+
0.15629
200+
0.13663
600+
0.12571
2000+
0.11916
QTY(Multiplicity:20):
Stock:
30,000
Mpq:
10000 (圆盘)
Delivery:
2-3 Business Day
Total:
3.13
C003517013 TPBT4448-1006 is designed and produced by Tech public(台舟), and is available for sale in the Discrete Semiconductor-Diode-Switching Diode of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003517013 TPBT4448-1006 reference price ¥0.1563,real-time inventory 30000. DFN1006-2L Reverse recovery time: 4nS, Reverse Leakage Current: 0.0000005A, Package: DFN1006-2L, Vf-Forward Voltage: 1.2V, If-forward Current: 0.1A, Configuration: 独立式, Vr-reverse voltage: 80V, 二极管配置: 独立式, 正向压降(Vf): 1.2V@100mA, 直流反向耐压(Vr): 80V, 整流电流: 100mA, 反向电流(Ir): 500nA@80V, 反向恢复时间(trr): 4ns. You can download the Chinese information, pin diagram, datasheet data manual function manual of TPBT4448-1006, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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