AGM312MAP

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	AGMSEMI(芯控源)
型号:	AGM312MAP
编号:	C003543553
封装:	DFN(3x3)
海关编码:	EAR99
参数描述:	DFN(3x3)
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道+1个P沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

18A；18A

功率(Pd)

3.6W

导通电阻(RDS(on)@Vgs,Id)

17mΩ@10V,10A；24mΩ@10V,10A

阈值电压(Vgs(th)@Id)

1.5V@250uA

栅极电荷(Qg@Vgs)

4.1nC@4.5V；12nC@10V

输入电容(Ciss@Vds)

345pF@25V

工作温度

-55℃~+150℃@(Tj)

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

5+

1.20527

50+

0.96998

150+

0.86914

500+

0.74331

2500+

0.68729

5000+

0.65368

数量(递增量:5):

库存:

227

+-

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询价

最小包装量:

5000 (圆盘)

交付周期:

2-3 工作日

共:

￥6.03

C003543553 AGM312MAP is designed and produced by AGMSEMI(芯控源), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003543553 AGM312MAP reference price ￥1.2053，real-time inventory 227. DFN(3x3) 类型: 1个N沟道+1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 18A；18A, 功率(Pd): 3.6W, 导通电阻(RDS(on)@Vgs,Id): 17mΩ@10V,10A；24mΩ@10V,10A, 阈值电压(Vgs(th)@Id): 1.5V@250uA, 栅极电荷(Qg@Vgs): 4.1nC@4.5V；12nC@10V, 输入电容(Ciss@Vds): 345pF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AGM312MAP, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.