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1N60G-AA3-R

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Mfr.:UTC(友顺)
Mfr. Part #:
YJC. No:
Package:SOT-223
ECCN:EAR99
Description:N沟道,600V,1A--
Datasheet:
SPECIFICATION
Category
MOSFET
Rds On
0.5A 10V 12Ω
VGS
4V 0.00025A
Package
SOT-223
Pd-Power Dissipation
8W
Transistor polarity
N沟道
VDS
600V
Continuous drain current
1A
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
1A
功率(Pd)
8W
导通电阻(RDS(on)@Vgs,Id)
12Ω@10V,500mA
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
0.55876
50+
0.46035
150+
0.41113
500+
0.37424
2500+
0.32414
5000+
0.30938
QTY(Multiplicity:5):
Stock:
217,500
Mpq:
2500 (圆盘)
Delivery:
2-3 Business Day
Total:
2.80

C003646669 1N60G-AA3-R is designed and produced by UTC(友顺), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C003646669 1N60G-AA3-R reference price ¥0.5588,real-time inventory 217500. SOT-223 Rds On: 0.5A 10V 12Ω, VGS: 4V 0.00025A, Package: SOT-223, Pd-Power Dissipation: 8W, Transistor polarity: N沟道, VDS: 600V, Continuous drain current: 1A, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 1A, 功率(Pd): 8W, 导通电阻(RDS(on)@Vgs,Id): 12Ω@10V,500mA, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60G-AA3-R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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