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2N5551

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Mfr.:JSMicro(杰盛微)
Mfr. Part #:
YJC. No:
Package:TO-92-3
ECCN:-
Description:NPN 电流:600mA 耐压:160V
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
625mW
直流电流增益(hFE@Ic,Vce)
80@10mA,5V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
20+
0.134038
200+
0.109288
1000+
0.086636
2000+
0.078386
10000+
0.071236
20000+
0.067386
QTY(Multiplicity:20):
Stock:
3,100
Mpq:
1000 (袋)
Delivery:
2-5 Business Day
Total:
2.69

C004500996 2N5551 is designed and produced by JSMicro(杰盛微), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004500996 2N5551 reference price ¥0.134038,real-time inventory 3100. TO-92-3 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 625mW, 直流电流增益(hFE@Ic,Vce): 80@10mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2N5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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