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3DD13003E6D

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Mfr.:Crhj(华晶)
Mfr. Part #:
YJC. No:
Package:TO-126
ECCN:-
Description:NPN+PNP 电流:1.3A 耐压:400V
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN+PNP
集电极电流(Ic)
1.3A
集射极击穿电压(Vceo)
400V
功率(Pd)
40W
直流电流增益(hFE@Ic,Vce)
15@200mA,5V
特征频率(fT)
5MHz
集电极截止电流(Icbo)
100uA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
400mV@500mA,100mA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
0.468599
50+
0.380599
150+
0.336599
400+
0.303599
2400+
0.277199
4800+
0.263999
QTY(Multiplicity:5):
Stock:
400
Mpq:
400 (袋)
Delivery:
2-5 Business Day
Total:
2.35

C004504027 3DD13003E6D is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004504027 3DD13003E6D reference price ¥0.468599,real-time inventory 400. TO-126 晶体管类型: NPN+PNP, 集电极电流(Ic): 1.3A, 集射极击穿电压(Vceo): 400V, 功率(Pd): 40W, 直流电流增益(hFE@Ic,Vce): 15@200mA,5V, 特征频率(fT): 5MHz, 集电极截止电流(Icbo): 100uA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 400mV@500mA,100mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 3DD13003E6D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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