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3DD3040A1-H-BD

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Crhj(华晶)
型号:
编号:
封装:TO-92-3
海关编码:-
参数描述:耐压:450V 电流:2A NPN
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
2A
集射极击穿电压(Vceo)
450V
功率(Pd)
800mW
特征频率(fT)
5MHz
集电极截止电流(Icbo)
100uA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@1A,250mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
5+
0.357546
50+
0.350346
150+
0.345546
500+
0.340746
510+
0.340746
520+
0.340746
数量(递增量:5):
库存:
2,000
最小包装量:
2000 (盒)
交付周期:
2-5 工作日
共:
1.79

C004504163 3DD3040A1-H-BD is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004504163 3DD3040A1-H-BD reference price ¥0.357546,real-time inventory 2000. TO-92-3 晶体管类型: NPN, 集电极电流(Ic): 2A, 集射极击穿电压(Vceo): 450V, 功率(Pd): 800mW, 特征频率(fT): 5MHz, 集电极截止电流(Icbo): 100uA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@1A,250mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 3DD3040A1-H-BD, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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