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NTE2378

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Mfr.:NTE Electronics
Mfr. Part #:
YJC. No:
Package:TO-3P
ECCN:-
Description:1个N沟道 耐压:900V 电流:5A
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
900V
连续漏极电流(Id)
5A
功率(Pd)
120W
导通电阻(RDS(on)@Vgs,Id)
3.6Ω@2A,10V
阈值电压(Vgs(th)@Id)
3V@1mA
输入电容(Ciss@Vds)
700pF@20V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
101.13
200+
40.36
500+
39.01
1000+
38.34
QTY(Multiplicity:1):
Stock:
1
Mpq:
1 (袋)
Delivery:
2-5 Business Day
Total:
101.13

C004542686 NTE2378 is designed and produced by NTE Electronics, and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004542686 NTE2378 reference price ¥101.13,real-time inventory 1. TO-3P 类型: 1个N沟道, 漏源电压(Vdss): 900V, 连续漏极电流(Id): 5A, 功率(Pd): 120W, 导通电阻(RDS(on)@Vgs,Id): 3.6Ω@2A,10V, 阈值电压(Vgs(th)@Id): 3V@1mA, 输入电容(Ciss@Vds): 700pF@20V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NTE2378, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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