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MMBT5551

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Formosa(美丽微)
型号:
编号:
封装:SOT-23
海关编码:-
参数描述:NPN 电流:600mA 耐压:160V
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
100@10mA,5V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
50+
0.113247
500+
0.091199
3000+
0.070666
6000+
0.063317
24000+
0.056947
51000+
0.053517
数量(递增量:50):
库存:
3,000
最小包装量:
3000 (圆盘)
交付周期:
2-5 工作日
共:
5.67

C004544185 MMBT5551 is designed and produced by Formosa(美丽微), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004544185 MMBT5551 reference price ¥0.113247,real-time inventory 3000. SOT-23 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 100@10mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBT5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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