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MMBT5551

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Mfr.:Huixin(慧芯)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:-
Description:耐压:160V 电流:600mA NPN
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
300@10mA,5V
特征频率(fT)
300MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
50+
0.083013
500+
0.065913
3000+
0.056413
6000+
0.050713
24000+
0.045773
51000+
0.043113
QTY(Multiplicity:50):
Stock:
3,000
Mpq:
3000 (圆盘)
Delivery:
2-5 Business Day
Total:
4.16

C004545154 MMBT5551 is designed and produced by Huixin(慧芯), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004545154 MMBT5551 reference price ¥0.083013,real-time inventory 3000. SOT-23 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 300@10mA,5V, 特征频率(fT): 300MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBT5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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