BSD816SN L6327

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Mfr.:	Infineon(英飞凌)
Mfr. Part #:	BSD816SN L6327
YJC. No:	C004545176
Package:	SOT-363-6
ECCN:	-
Description:	1个N沟道 耐压:20V 电流:1.4A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

20V

连续漏极电流(Id)

1.4A

功率(Pd)

500mW

导通电阻(RDS(on)@Vgs,Id)

160mΩ@1.4A,2.5V

阈值电压(Vgs(th)@Id)

950mV@3.7uA

栅极电荷(Qg@Vgs)

600pC@2.5V

输入电容(Ciss@Vds)

180pF@10V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

0.286185

200+

0.11075

500+

0.106858

1000+

0.104935

QTY(Multiplicity:1):

Stock:

3,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥0.29

C004545176 BSD816SN L6327 is designed and produced by Infineon(英飞凌), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004545176 BSD816SN L6327 reference price ￥0.286185，real-time inventory 3000. SOT-363-6 类型: 1个N沟道, 漏源电压(Vdss): 20V, 连续漏极电流(Id): 1.4A, 功率(Pd): 500mW, 导通电阻(RDS(on)@Vgs,Id): 160mΩ@1.4A,2.5V, 阈值电压(Vgs(th)@Id): 950mV@3.7uA, 栅极电荷(Qg@Vgs): 600pC@2.5V, 输入电容(Ciss@Vds): 180pF@10V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of BSD816SN L6327, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.