SIS413DN-T1-GE3

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Mfr.:	Vishay(威世)
Mfr. Part #:	SIS413DN-T1-GE3
YJC. No:	C004548637
Package:	PowerPAK1212-8
ECCN:	-
Description:	1个P沟道 耐压:30V 电流:18A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个P沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

18A

功率(Pd)

3.7W；52W

导通电阻(RDS(on)@Vgs,Id)

9.4mΩ@10V,15A

阈值电压(Vgs(th)@Id)

2.5V@250uA

栅极电荷(Qg@Vgs)

110nC@10V

输入电容(Ciss@Vds)

4.28nF@15V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

3.35

10+

2.76

30+

2.46

100+

2.16

500+

1.77

1000+

1.68

QTY(Multiplicity:1):

Stock:

3,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥3.35

C004548637 SIS413DN-T1-GE3 is designed and produced by Vishay(威世), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004548637 SIS413DN-T1-GE3 reference price ￥3.35，real-time inventory 3000. PowerPAK1212-8 类型: 1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 18A, 功率(Pd): 3.7W；52W, 导通电阻(RDS(on)@Vgs,Id): 9.4mΩ@10V,15A, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 110nC@10V, 输入电容(Ciss@Vds): 4.28nF@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SIS413DN-T1-GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.