NTMT150N65S3HF

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	ON(安森美)
型号:	NTMT150N65S3HF
编号:	C004551728
封装:	PQFN-4(8x8)
海关编码:	-
参数描述:	1个N沟道 耐压:650V 电流:24A Power MOSFET, N-Channel, SUPERFET
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

24A

功率(Pd)

192W

导通电阻(RDS(on)@Vgs,Id)

121mΩ@10V,12A

阈值电压(Vgs(th)@Id)

5V@540uA

栅极电荷(Qg@Vgs)

43nC@10V

输入电容(Ciss@Vds)

1.985nF@400V

工作温度

-55℃~+150℃@(Tj)

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

29.66

10+

29.01

30+

28.58

100+

28.14

数量(递增量:1):

库存:

3,000

+-

加入购物车

询价

最小包装量:

3000 (圆盘)

交付周期:

2-5 工作日

共:

￥29.66

C004551728 NTMT150N65S3HF is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004551728 NTMT150N65S3HF reference price ￥29.66，real-time inventory 3000. PQFN-4(8x8) 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 24A, 功率(Pd): 192W, 导通电阻(RDS(on)@Vgs,Id): 121mΩ@10V,12A, 阈值电压(Vgs(th)@Id): 5V@540uA, 栅极电荷(Qg@Vgs): 43nC@10V, 输入电容(Ciss@Vds): 1.985nF@400V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NTMT150N65S3HF, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.