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NTH4L027N65S3F

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ON(安森美)
型号:
编号:
封装:TO-247-4
海关编码:-
参数描述:1个N沟道 耐压:650V 电流:75A
数据手册:
规格
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
650V
连续漏极电流(Id)
75A
功率(Pd)
595W
导通电阻(RDS(on)@Vgs,Id)
27.4mΩ@35A,10V
阈值电压(Vgs(th)@Id)
5V@3mA
栅极电荷(Qg@Vgs)
259nC@10V
输入电容(Ciss@Vds)
7.69nF@400V
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
257.99
200+
99.84
450+
96.33
900+
94.6
数量(递增量:1):
库存:
450
最小包装量:
450 (管)
交付周期:
2-5 工作日
共:
257.99

C004552323 NTH4L027N65S3F is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004552323 NTH4L027N65S3F reference price ¥257.99,real-time inventory 450. TO-247-4 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 75A, 功率(Pd): 595W, 导通电阻(RDS(on)@Vgs,Id): 27.4mΩ@35A,10V, 阈值电压(Vgs(th)@Id): 5V@3mA, 栅极电荷(Qg@Vgs): 259nC@10V, 输入电容(Ciss@Vds): 7.69nF@400V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NTH4L027N65S3F, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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